| 当前IC制造的几种新工艺 |
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| 引用本文： | 翁寿松. 当前IC制造的几种新工艺[J]. 电子工业专用设备, 2004, 33(2): 70-75 |
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| 作者姓名： | 翁寿松 |
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| 作者单位： | 无锡市罗特电子有限公司,江苏,无锡,214002 |
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| 摘 要： | 2001《国际半导体技术指南(ITRS)》要求2004年IC芯片特征尺寸达90nm。为了实现这个规划,必须采用IC制造的多种新工艺,如铜互连、低k绝缘层、CMP、高k绝缘层、应变硅和SOI等。
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| 关 键 词： | 芯片 IC制造 新工艺 |
| 文章编号： | 1004-4507(2004)02-0070-06 |
| 修稿时间： | 2003-12-20 |
The Several New Technology of IC Manufacturing Today |
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| WENG Shou-song. The Several New Technology of IC Manufacturing Today[J]. Equipment for Electronic Products Marufacturing, 2004, 33(2): 70-75 |
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| Authors: | WENG Shou-song |
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| Abstract: | The ITRS2001demands that the IC chip feature size achieves90nm in the year2004.In or-der to realize the ITRS2001,the many new technology of IC manufacturring must be used,such as the Cu interconnection,the low-k insulating layer,the CMP,the high-k insulating layer,the strained silicon and SOI etc. |
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| Keywords: | Chip IC manufacturing New technology |
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