Simulation of slow current transients and current compression in AlGaAs/GaAs HFETs |
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Authors: | H Ikarashi K Kitamura N Kurosawa K Horio |
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Affiliation: | (1) Faculty of Systems Engineering, Shibaura Institute of Technology, 307 Fukasaku, Minuma-ku Saitama, 337-8570, Japan |
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Abstract: | Two-dimensional transient simulations of AlGaAs/GaAs HFETs are performed in which substrate traps and surface states are considered.
When the drain voltage is raised abruptly, the drain current overshoots the steady-state value, and when it is lowered abruptly,
the drain current remains at a low value, showing drain-lag behavior. Turn-on characteristics are also calculated when both
the gate voltage and the drain voltage are changed abruptly, and quasi-pulsed I-V curves are derived from them. It is shown that the drain lag due to substrate traps could become a cause of so-called current
compression of the HFETs. It is also shown that gate lag due to surface states could become a major cause of the current compression. |
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Keywords: | AlGaAs/GaAs HFET Trap Current compression Drain lag Gate lag |
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