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基于矢量光场的VCSEL数值模型
引用本文:赵鼎,林世鸣.基于矢量光场的VCSEL数值模型[J].半导体学报,2003,24(12):1297-1302.
作者姓名:赵鼎  林世鸣
作者单位:中国科学院半导体研究所集成光电子学国家重点实验室,北京100083
基金项目:国家自然科学基金;69896260,69937010;
摘    要:提出了一种基于矢量光场的氧化层限制型VCSEL 的数值模型,在综合考虑激光器中电场方程、热场方程、载流子方程的前提下,采用矢量方程对器件中的光场分布进行描述,计算表明所得结果能够更合理地反映器件实际的工作状态.文中还进一步将上述矢量场方程与传输矩阵法和时域有限差分法相结合,通过计算获得器件中光场的详细信息.

关 键 词:矢量光场    数值模型    VCSEL
文章编号:0253-4177(2003)12-1297-06
修稿时间:2003年1月9日

Numerical Model of VCSEL Based on Vectorial Electromagnetic Field
Zhao Ding and Lin Shiming.Numerical Model of VCSEL Based on Vectorial Electromagnetic Field[J].Chinese Journal of Semiconductors,2003,24(12):1297-1302.
Authors:Zhao Ding and Lin Shiming
Abstract:A comprehensive numerical model of dielectric apertured VCSEL is presented,which includes all major physics process in device.Especially the light field is described through vectorial electromagnetic equations.This approach is close to the real situation of modes in active layer and obtains higher accuracy.Furthermore the vectorial field equations are combined with transfer matrix method and time domain finite difference method separately,which can acquire the distribution of light in device and much other information about light propagation process.It is noticed that solutions are more reasonable than those calculated through scalar field equations.This work is helpful to optimize the structure of VCSEL.
Keywords:vectorial field  numerical model  VCSEL
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