High-speed and low-power GaAs DCFL divider |
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| Authors: | Nagano K. Yagita H. Tamura A. Uenoyama T. Tsujii H. Nishii K. Sakashita T. Onuma T. |
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| Affiliation: | Matsushita Electric Industrial Co. Ltd., Central Research Laboratory, Moriguchi, Japan; |
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| Abstract: | High-speed and low-power divide-by-252 or -256 circuit have been fabricated by using high-transconductance GaAs enhancement-mode MESFETs. This variable-modulus divider is able to operate up to a clock frequency of 3.7 GHz. The total power dissipation at the maximum frequency is 180 mW, and it is as low as 42 mW and 30 mW at 3 GHz and 2.5 GHz, respectively. |
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