SiC MOSFET模块结温监测研究

碳化硅金属氧化物半导体场效应管SiC MOSFET(silicon carbide metal oxide semiconductor field effect tra-nsistor)以其优异的材料特性成为一种很有前景的高功率密度和高效率器件,而结温是其设计和工作的一个重要参数,也是健康状态的重要指标.为了状态监控的...

Study on Junction Temperature Monitoring of SiC MOSFET Module

Owing to its excellent material properties, silicon carbide metal oxide semiconductor field effect tra-nsistor (SiC MOSFET) is becoming a promising device with high power density and high efficiency. As an important design and operating parameter, junction temperature is also an important indicator of health status. For the purpose of state monitoring, a junction temperature extraction method based on quasi-threshold voltage was proposed in this paper, which is less affected by self-heating. First, it was theoretically and experimentally proved that the threshold voltage V_TH showed a good linearity with temperature, and this relationship had a negative temperature sensitivity. Then, the effect of external drive resistor R_Gext on V_TH was observed experimentally. Finally, the circuit for obtaining the quasi-threshold voltage was put forward in combination with the intelligent drive, and the feasibility of the proposed method was verified by experimental results.