Electrically conductive SiC ceramics processed by pressureless sintering |
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Authors: | Yong-Hyeon Kim Young-Wook Kim Kwang Joo Kim |
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Affiliation: | 1. Functional Ceramics Laboratory, Department of Materials Science and Engineering, The University of Seoul, Seoul, South Korea;2. Department of Physics, Konkuk University, Seoul, South Korea |
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Abstract: | Polycrystalline SiC ceramics with 10 vol% Y2O3-AlN additives were sintered without any applied pressure at temperatures of 1900-2050°C in nitrogen. The electrical resistivity of the resulting SiC ceramics decreased from 6.5 × 101 to 1.9 × 10?2 Ω·cm as the sintering temperature increased from 1900 to 2050°C. The average grain size increased from 0.68 to 2.34 μm with increase in sintering temperature. A decrease in the electrical resistivity with increasing sintering temperature was attributed to the grain-growth-induced N-doping in the SiC grains, which is supported by the enhanced carrier density. The electrical conductivity of the SiC ceramic sintered at 2050°C was ~53 Ω?1·cm?1 at room temperature. This ceramic achieved the highest electrical conductivity among pressureless liquid-phase sintered SiC ceramics. |
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Keywords: | electrical properties grain growth pressureless sintering silicon carbide |
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