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Fabrication of an ultra-thick-oriented 3C-SiC coating on the inner surface of a graphite tube by high-frequency induction-heated halide chemical vapor deposition |
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| Authors: | Rong Tu Xian Zhang Youfeng Lai Mingxu Han Song Zhang Ji Shi Haiwen Li Takashi Goto Lianmeng Zhang |
| Affiliation: | 1. State Key Laboratory of Advanced Technology for Material Synthesis and Processing, Wuhan University of Technology, Wuhan, People's Republic of China;2. Institute for Materials Research, Tohoku University, Sendai, Japan;3. State Key Laboratory of Advanced Technology for Material Synthesis and Processing, Wuhan University of Technology, Wuhan, People's Republic of China School of Materials and Chemical Technology, Tokyo Institute of Technology, Tokyo, Japan;4. State Key Laboratory of Advanced Technology for Material Synthesis and Processing, Wuhan University of Technology, Wuhan, People's Republic of China International Research Center for Hydrogen Energy, Kyushu University, Fukuoka, Japan |
| Abstract: | Cubic SiC (3C-SiC) is a promising material for nuclear industry applications due to its excellent properties. In this report, a highly oriented thick 3C-SiC coating with good crystallinity was prepared on the inner surface of a monolithic graphite tube via high-frequency induction-heated halide chemical vapor deposition using SiCl4, CH4, and H2 as precursors. The texture coefficient (TC(hkl)), microstructure, and deposition rate along the tube axis was studied. 3C-SiC coating with a high (111) orientation and crystallinity was obtained. Along the tube axis, TC(111) was consistent with the temperature distribution. The surficial morphology of the 3C-SiC coating changed from pebble-like to hexangular facet and then to hemispherical. The deposition rate and coating thickness were 300 μm/h and 615 μm, respectively, which is sufficiently rapid and thick enough to obtain free-standing SiC tubes for nuclear reactors. |
| Keywords: | 3C-SiC coating high-frequency induction-heated halide chemical vapor deposition microstructure orientation |