Preparation of optical media with NIR luminescent Bi+ impurity centers by ion exchange |
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Authors: | Alexey N. Romanov Elena V. Haula Mikhail S. Kouznetsov Igor S. Lisitsky Nikita A. Pimkin Kirill N. Boldyrev Andrei E. Sereda Dmitry P. Shashkin Vladimir N. Korchak |
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Affiliation: | 1. N.N. Semenov Institute of Chemical Physics, Russian Academy of Sciences, Moscow, Russia;2. State Scientific-Research and Design Institute of Rare-Metal Industry “Giredmet” JSC, Moscow, Russia;3. Institute of Spectroscopy, Russian Academy of Sciences, Moscow, Russia;4. Main Federal Center of Medical and Forensic Examination of the Ministry of Defense of the Russian Federation, Moscow, Russia |
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Abstract: | Single crystal of TlCl was doped with NIR photoluminescent univalent bismuth cations by prolonged immersion in liquid bismuth metal. The ion exchange Tl+ + Bi0 ↔ Tl0 + Bi+ at the crystal surface with subsequent Bi+ migration to the bulk are expected to drive the doping process. Contrary with Bi-doped TlCl crystals, grown by Bridgman method, the ion exchange does not produce the additional nonluminescent bismuth-containing centers. The investigation of photoluminescence emission and excitation spectra lead to the conclusion, that Bi+ is the main NIR emissive center in Bi-doped TlCl. |
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