A field-enhanced generation model for field emission from p-typesilicon |
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| Authors: | Qing-An Huang Ming Qin Bin Zhang Sin JKO Poon MC |
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| Affiliation: | Microelectron. Center, Southeast Univ., Nanjing ; |
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| Abstract: | Field penetration into p-type silicon emitter creates a depletion region and causes the field emission current to he limited by the supply of electrons in the presence of a high electric field. A model is presented that takes field-enhanced generation within the depletion region into account, which may explain the nonlinear phenomenon in Fowler-Nordheim (F-N) plots of p-type silicon |
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