Microstructural Characterization of Porous Silicon Carbide Membrane Support With and Without Alumina Additive

Porous silicon carbide (SiC) membrane supports sintered at 1500°–1800°C were prepared by cold isostatic pressing (CIP) under different pressures and using different amounts of alumina additive (0%–4%). The relationship between processing factors and pore size and microstructure was examined. Varying the sintering temperature, the CIP pressure and the amount of additive used were found to be effective for controlling pore size and microstructure. The pore size and particle size of the membrane support prepared without alumina were found to increase with increasing sintering temperature. This was attributed to surface diffusion. Densification of the undoped support did not occur, however, because of concurrent pore development. In the SiC membrane support containing 4% alumina, small particles and a pore size of around 100 nm were retained. This was because of the formation of a limited amount of SiO₂–Al₂O₃ liquid phase during sintering.