| 基于非晶软磁层的巨磁电阻单元性能研究 |
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| 引用本文： | 张祖刚,张万里,文岐业,唐晓莉,张怀武. 基于非晶软磁层的巨磁电阻单元性能研究[J]. 功能材料与器件学报, 2006, 12(1): 40-44 |
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| 作者姓名： | 张祖刚 张万里 文岐业 唐晓莉 张怀武 |
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| 作者单位： | 电子科技大学,微电子与固体电子学院,成都,610054;电子科技大学,微电子与固体电子学院,成都,610054;电子科技大学,微电子与固体电子学院,成都,610054;电子科技大学,微电子与固体电子学院,成都,610054;电子科技大学,微电子与固体电子学院,成都,610054 |
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| 摘 要： | 采用剥离工艺制备了单元大小为10μm×18μm的CoNbZr/Co/Cu/Co和NiFe/Co/Cu/Co多层膜结构的3×3自旋阀单元阵列,并测试了自旋阀单元的静态和动态巨磁电阻特性.结果表明CoNbZr层对快速磁场变化具有良好的线性响应特性.与NiFe/Co/Cu/Co自旋阀单元相比,微米尺度的CoNbZr/Co/Cu/Co自旋阀单元具有更良好的自旋电子特性,可以应用到包括MRAM器件在内的自旋电子器件中.
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| 关 键 词： | 自旋阀 巨磁电阻 非晶薄膜 |
| 文章编号： | 1007-4252（2006）01-0040-05 |
| 收稿时间： | 2005-04-04 |
| 修稿时间： | 2005-04-042005-06-27 |
Characteristics of the element with giant magneto - resistance based on the amorphous film |
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| ZHANG Zu-gang,ZHANG Wan-li,WEN Qi-ye,TANG Xiao-li,ZHANG Huai-wu. Characteristics of the element with giant magneto - resistance based on the amorphous film[J]. Journal of Functional Materials and Devices, 2006, 12(1): 40-44 |
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| Authors: | ZHANG Zu-gang ZHANG Wan-li WEN Qi-ye TANG Xiao-li ZHANG Huai-wu |
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| Abstract: | The spin valve structure magnetic multilayer arrays of CoNbZr/Co/Cu/Co and NiFe/Co/Cu/Co were fabricated by lift-off technology.The static GMR and dynamics GMR behaviors were measured.The results show that CoNbZr layer has good linear response to the rapid changes of magnetic field.The CoNbZr/Co/Cu/Co spin valve element shows good GMR characteristics compared with the NiFe/Co/Cu/Co spin valve element.The CoNbZr/Co/Cu/Co spin-valve element can be applied to spin-electronic devices including magnetic random access memory. |
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| Keywords: | spin-valves giant magneto-resistance amorphous film |
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