| 低温等离子体气相沉积氮化镓薄膜的光谱特性研究 |
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| 引用本文： | 符斯列,陈俊芳,郭超峰. 低温等离子体气相沉积氮化镓薄膜的光谱特性研究[J]. 信息记录材料, 2010, 11(3): 28-31 |
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| 作者姓名： | 符斯列 陈俊芳 郭超峰 |
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| 作者单位： | 华南师范大学,物理与电信工程学院,广州,510006 |
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| 摘 要： | 采用低温等离子体增强化学气相沉积工艺,以氮气N2和三甲基镓(TMG)为反应气源,在蓝宝石衬底-αAl2O3的(0001)面上低温生长了GaN薄膜。薄膜光致发光光谱(PL)出现两个发光带,一个是中心位置位于364nm的锐而强的带边峰。另一个是中心波长在550nm(2.2eV),范围在480~700nm的强而宽的黄光发光带。傅立叶红外光谱(FTIR)观察到GaN的A1(LO)的下沿峰和E1(TO)峰,说明这是六方结构的GaN薄膜。
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| 关 键 词： | 低温等离子体 氮化镓薄膜 PL光谱 FTIR光谱 |
The Spectrum Characteristics of GaN Thin Film prepared by Low-temperature Plasma Chemical Vapor Deposition |
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| FU Si-lie,CHEN Jun-fang,GUO Chao-feng. The Spectrum Characteristics of GaN Thin Film prepared by Low-temperature Plasma Chemical Vapor Deposition[J]. Information Recording Materials, 2010, 11(3): 28-31 |
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| Authors: | FU Si-lie CHEN Jun-fang GUO Chao-feng |
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| Abstract: | Low-temperature plasma enhanced vapor deposition technology was adopted to grow GaN films on(0001) α-Al2O3 substrate at T=450℃.The gas sources are pure N2 and trimethylgallium(TMG).Photoluminescence analysis of GaN thin film showed that a sharp edge peak o is located at 364 nm,and a wide yellow band centered at 550(2.2 eV) with a range of 480-700nm.In addition,A1(LO) peak and E1(TO) peak were found in FTIR spectrum.All the results show that it is a wurtzite GaN sample. |
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| Keywords: | low-temperature plasma GaN film PL FTIR |
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