| 半导体表面等离子体效应对THz波传输特性的影响 |
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| 引用本文： | 傅作明.半导体表面等离子体效应对THz波传输特性的影响[J].红外,2009,30(9):26-29. |
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| 作者姓名： | 傅作明 |
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| 作者单位： | 电子科技大学光电信息学院,四川,成都,610054 |
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| 摘 要： | 本文提出了一种利用激光照射高阻硅来控制硅片中THz波传输特性的方法.利用波长为808nm的激光照射高阻硅产生光生电导来控制硅片对THz波的吸收系数,进而控制硅片中THz波的传输特性,并测量了在光强为1.9W/cm2的激光照射下硅片对THz波的透射特性.在1.9W/cm2的激光照射下,0.07cm硅片的THz波透射量减少了20%.实验证明,利用激光控制硅片中的THz波传输是可行的.
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| 关 键 词： | 光生等离子体 复介电常数 吸收系数 复折射率 |
| 收稿时间： | 2009/4/16 |
| 修稿时间： | 2009/4/27 0:00:00 |
Influence of Photoinduced Surface Plasma in Semiconductor on Transmission Characteristics of THz Wave |
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| fuzuoming.Influence of Photoinduced Surface Plasma in Semiconductor on Transmission Characteristics of THz Wave[J].Infrared,2009,30(9):26-29. |
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| Authors: | fuzuoming |
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| Affiliation: | School of Opto-electronic Information;University of Electronic Science and Technology of China;Chengdu 610054;China |
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| Abstract: | A method to control the transmission characteristics of the THz wave in a silicon wafer by using a laser to irradiate the surface of a high resistance silicon(H-Si) wafer is presented.First,the laser at the wavelength of 808nm is used to irradiate the H-Si wafer so as to let it generate the photoinduced conductance.Then,the photoinduced conductance is used to control the absorption coefficient of the THz wave and hence to control the transmission characteristics of the THz wave in the silicon wafer. The tra... |
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| Keywords: | THz |
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