Frequency response of top-gated carbon nanotube field-effect transistors |
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Authors: | Singh D.V. Jenkins K.A. Appenzeller J. Neumayer D. Grill A. Wong H.-S.P. |
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Affiliation: | IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA; |
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Abstract: | The ac performance of carbon nanotube field-effect transistors (CNFETs) has been characterized using two approaches involving: 1) time- and 2) frequency-domain measurements. A high input impedance measurement system was used to demonstrate time-domain switching of CNFETs at frequencies up to 100 kHz. The low level of signal crosstalk in CNFETs fabricated on quartz substrates enabled frequency-domain measurements of the ac response of CNFETs in the megahertz range, over five orders of magnitude higher in frequency than previously reported ac measurements of CNFET devices. |
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