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Frequency response of top-gated carbon nanotube field-effect transistors
Authors:Singh   D.V. Jenkins   K.A. Appenzeller   J. Neumayer   D. Grill   A. Wong   H.-S.P.
Affiliation:IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA;
Abstract:The ac performance of carbon nanotube field-effect transistors (CNFETs) has been characterized using two approaches involving: 1) time- and 2) frequency-domain measurements. A high input impedance measurement system was used to demonstrate time-domain switching of CNFETs at frequencies up to 100 kHz. The low level of signal crosstalk in CNFETs fabricated on quartz substrates enabled frequency-domain measurements of the ac response of CNFETs in the megahertz range, over five orders of magnitude higher in frequency than previously reported ac measurements of CNFET devices.
Keywords:
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