Interfaces between - and silicon

As the epitaxy of crystalline LaAlO₃ has not been realized yet, we investigated the use of a γ-Al₂O₃ buffer layer between the high-κ and the substrate. We firstly studied the structural matching of γ-Al₂O₃(0 0 1) with a Si(0 0 1)-p(2×1) reconstructed surface. According to experimental data and computations in the density functional theory framework, we found stable interfaces between γ-Al₂O₃ and Si which encounters surface reconstruction changes. These interfaces satisfy the criterion of an insulating buffer layer.