Mobility analysis of surface roughness scattering in FinFET devices |
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Authors: | Jae Woo Lee,Doyoung Jang,Mireille MouisGyu Tae Kim,Thomas ChiarellaThomas Hoffmann,Gé rard Ghibaudo |
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Affiliation: | a IMEP-LAHC, INPG/MINATEC, 3 Parvis Louis Néel, BP 257, 38016 Grenoble, France b School of Electrical Engineering, Korea University, Seoul 136-701, Republic of Korea c IMEC, Kapeldreef 75, B-3000 Leuven, Belgium |
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Abstract: | This paper presents a mobility analysis of the surface roughness scattering along the different interfaces of FinFET devices. Using temperature dependent analysis of effective mobility, quantitative information about the influence of the roughness could be obtained directly on the device. The sidewall and top surface drain current components were estimated from the total drain currents of different fin width conditions. Using a conventional mobility model, it was possible to fit the gate voltage and temperature dependence of sidewall and top surface mobilities. This procedure allowed the contribution of the surface roughness scattering to be quantified with nondestructive characterization. Significant differences were observed for sidewalls and top surface. In the specific case under study, surface roughness scattering on sidewalls was about three times stronger than on top surface for n-channel FinFETs, whereas it remained similar for p-channel ones. |
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Keywords: | FinFET Low temperature measurement Effective mobility Surface separation Surface roughness scattering |
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