High-Field Magneto-Conductivity Analysis of Bi2Se3 Single Crystal

We report the high-field (up to 14 Tesla) magneto-conductivity analysis of Bi₂Se₃ topological insulator grown via the self-flux method. The detailed experimental investigations including crystal growth as well as the electrical, thermal, and spectroscopic characterizations of the resultant Bi₂Se₃ single crystal are already reported by some of us. The current letter deals with high-field magneto-conductivity analysis in terms of Hikami Larkin Nagaoka (HLN) model, which revealed that the electronic conduction is dominated by both surface state-driven weak anti-localization (WAL), as well as the bulk weak localization (WL) states. Further, by applying the HLN equation, we have extracted the fitting parameters, i.e., phase coherence length (l_φ) and the pre-factor (α). Here, the magneto-conductivity data is fitted up to ± 5 Tesla, but in order to extract reliable fitting parameters, the same is fitted at much lower magnetic fields, i.e., up to ± 1 Tesla. The value of the HLN coefficient (α), extracted from the HLN equation exhibited values close to ? 1.0, indicating both WAL and WL contributions. On the other hand, the extracted (l_{varphi }) is seen to decrease from 11.125 to 5.576 nm as the temperature is increased from 5 to 200 K, respectively. Summarily, the short letter discusses primarily the temperature-dependent magneto-conductivity analysis of pristine Bi₂Se₃ single crystal by the HLN model.