Modeling of ionizing irradiation influence on Schottky-gate field-effect transistor

Mechanism of radiation effects in semiconductor (GaAs) is described. Analytic and numerical (equivalent circuit and quasi-hydrodynamic methods) models of ionizing irradiation influence on semiconductor devices are discussed. The GaAs microwave MESFET was selected as the investigation object. The combination of the quasi-hydrodynamic and equivalent circuits methods should provide a possibility to take into account all essential effects and at the same time to save the computation time in comparison with Monte Carlo method.