Modeling of ionizing irradiation influence on Schottky-gate field-effect transistor |
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Authors: | N V Demarina S V Obolensky |
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Affiliation: | Department of Electronics, Radiophysics Faculty, Nyzhny Novgorod State University, Gagarina Prospect 23, N. Novgorod 603600, Russia |
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Abstract: | Mechanism of radiation effects in semiconductor (GaAs) is described. Analytic and numerical (equivalent circuit and quasi-hydrodynamic methods) models of ionizing irradiation influence on semiconductor devices are discussed. The GaAs microwave MESFET was selected as the investigation object. The combination of the quasi-hydrodynamic and equivalent circuits methods should provide a possibility to take into account all essential effects and at the same time to save the computation time in comparison with Monte Carlo method. |
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