Slow-trap profiling of NO and N2O nitrided oxides grown on Si and SiC substrates

In this paper, we demonstrate the unique ability of a newly developed slow-trap profiling technique to characterise silicon-based MOS capacitors in strong inversion. We also demonstrate the applicability of the slow-trap profiling technique for the characterisation of oxides grown on SiC. The obtained slow-trap profiles show that NO nitridation eliminates while N₂O creates defects acting as slow traps in the case of both Si and SiC substrates. The corresponding effects of nitridation on interface traps and fixed oxide charge are also discussed.