Review of reliability issues of metal-semiconductor-metal and avalanche photodiode photonic detectors

In this paper, we present a brief review of the principal mechanisms that influence the reliability of metal–semiconductor–metal (MSM) interdigitated photodetectors and avalanche photodiodes (APD). The most important mechanism influencing reliability in these devices is the dark current. However, other mechanisms such as edge and microplasmic breakdown and electrode degradation, can also affect device reliability. In this study, we describe numerical simulation techniques that can be utilized to understand the workings of some of these mechanisms and illustrate their usage in a few representative devices. Specifically, we discuss how advanced drift-diffusion and hydrodynamic simulation techniques can be used to study the dark current as well as the location of breakdown in MSM and APD devices.