Dysprosium Doped Dielectric Materials for Sintering in Reducing Atmospheres |
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| Authors: | Wen-Hsi Lee W.A. Groen Herbert Schreinemacher Detlev Hennings |
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| Affiliation: | (1) Philips Passive Components Kaohsiung (PPCK), Taiwan;(2) Philips Research Laboratories, 52066 Aachen, Germany |
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| Abstract: | Substitution of Dy rare earth ions was studied in Ba(Ti,Zr)O3 dielectric materials, using thermogravimetry, X-ray diffraction and dielectric measurements. Dy3+ ions enter both the A- and the B-sites of the perovskite structure, however, the solubility on B-sites is up to 9 mol %, whereas it is only 2.5 mol% on A-sites. Dy can be easily shifted from A- to B-sites and back, using Ba or Ti excess in the material. Dy3+ on B-sites is a strong electron acceptor. Dy doped dielectric materials are cofired with Ni electrodes in reducing atmosphere to highly insulating BME multilayer capacitors. |
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| Keywords: | multilayer capacitors base metal electrodes rare earth acceptors Ba(TiZr)O3 dielectric |
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