Cd-free buffer layers for CIGS solar cells prepared by a dry process |
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Authors: | Susanne Siebentritt Timon Kampschulte Andreas Bauknecht Ulf Blieske Wolfgang Harneit Ulrich Fiedeler Martha Lux-Steiner |
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Affiliation: | Hahn-Meitner-Institut, Glienicker Str. 100, 14109 Berlin, Germany |
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Abstract: | ZnSe buffer layers for Cu(ln,Ga)Se2/buffer/ZnO solar cells have been prepared by metal organic chemical vapor deposition (MOCVD). Using photoassisted MOCVD, deposition temperatures down to 265°C are possible. It is shown that deposition temperatures well below 300°C are essential as well as deposition times not much longer than 3 min. Higher temperatures and longer deposition times lead to absorber degradation. With optimized buffer deposition efficiencies of 11% have been obtained on CIGS absorbers from the Siemens pilot production line. |
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Keywords: | CIGS ZnSe Buffer MOCVD |
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