| 4H-SiC BJT的Early电压分析 |
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| 引用本文： | 韩茹,李聪,杨银堂,贾护军.4H-SiC BJT的Early电压分析[J].半导体学报,2007,28(9):1433-1437. |
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| 作者姓名： | 韩茹 李聪 杨银堂 贾护军 |
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| 作者单位： | 西安电子科技大学微电子学院，宽禁带半导体材料与器件教育部重点实验室，西安 710071;西安电子科技大学微电子学院，宽禁带半导体材料与器件教育部重点实验室，西安 710071;西安电子科技大学微电子学院，宽禁带半导体材料与器件教育部重点实验室，西安 710071;西安电子科技大学微电子学院，宽禁带半导体材料与器件教育部重点实验室，西安 710071 |
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| 基金项目： | 教育部科学技术研究项目
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国家部委预研项目 |
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| 摘 要： | 通过考虑缓变基区4H-SiC BJT电流增益及器件内4种载流子复合过程,计算了4H-SiC BJT的厄利(Early)电压,分析了Early电压及电流增益的温度特性.结果表明,其他参数不变时,Early电压VA随发射区掺杂浓度NE增大而增大,随集电区掺杂浓度Nc增大而减小,随基区宽度W增大而增大.SiC中杂质非完全离化会影响4H-SiC BJT的Early电压及电流增益的温度特性.
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| 关 键 词： | 碳化硅双极晶体管 Early电压 共射极电流增益 温度 Early 电压分析 Voltage 影响 离化 非完全 中杂 基区宽度 集电区 掺杂浓度 发射区 参数 结果 温度特性 计算 复合过程 载流子 器件 电流增益 缓变 |
| 文章编号： | 0253-4177（2007）09-1433-05 |
| 修稿时间： | 4/26/2007 4:21:41 PM |
Analysis of Early Voltage in 4H-SiC BJTs |
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| Han Ru,Li Cong,Yang Yintang and Jia Hujun.Analysis of Early Voltage in 4H-SiC BJTs[J].Chinese Journal of Semiconductors,2007,28(9):1433-1437. |
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| Authors: | Han Ru Li Cong Yang Yintang and Jia Hujun |
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| Affiliation: | Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China |
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| Abstract: | The Early voltage of 4H-SiC BJT,which has an exponential impurity profile in the base,is calculated,taking into account the current gain of the device and four recombination processes in the device.The effects of temperature on the Early voltage and the current gain of the 4H-SiC BJT are investigated.Simulation results show that,keeping the other parameters unchanged,the Early voltage increases with NE (emitter doping density),and decreases when NC (collector doping density) increases and W(base width) decreases.The incomplete ionization of the impurities in 4H-SiC can affect the temperature dependences of the Early voltage and current gain. |
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| Keywords: | SiC BJT Early voltage common-emitter current gain temperature |
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