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TFT_LCD驱动芯片GATE/SOURCE静电保护电路设计与实现
引用本文:唐建东.TFT_LCD驱动芯片GATE/SOURCE静电保护电路设计与实现[J].电子质量,2009(6):74-76.
作者姓名:唐建东
作者单位:深圳职业技术学院,广东,深圳,518055
摘    要:文章描述了TFT_LCD驱动芯片防静电(ESD)保护电路的布局,重点分析和设计了TFT_LCD驱动芯片GATE和SOURCE引脚的ESD保护电路。ESD保护电路布局上,采用髓排ESD电路错开呈”品字形“排列,使ESD电流均匀流通。在GATE保护电路中,采用二极管接法代替通用PMOS,防止电路产生Latch-up效应。SOURCE的保护电路中.NMOS的Drain设计了RPO(Resisl Protection Oxide),使流经Drain的电流均匀分散,使二次击穿电压升高。

关 键 词:TFT_LCD驱动芯片  ESD保护  击穿电压

Design & Implement of GATE/SOURCE Pad ESD Protection in TFT_LCD Driver IC
Tang Jian-dong.Design & Implement of GATE/SOURCE Pad ESD Protection in TFT_LCD Driver IC[J].Electronics Quality,2009(6):74-76.
Authors:Tang Jian-dong
Affiliation:Tang Jian- dong (Shenzhen Polytechnic Microelectronic technology Engineering,Guangdong Shenzhen 518055)
Abstract:This paper describes the layout of TFT_LCD driver IC's ESD protection. It mainly analyzes and designs ESD protection for GATE & SOURCE pin in TFT_LCD driver IC. It is adopted that triangle-shaped arrangement in two line ESD circuit is adopted to make the electric current pass equably. In the GATE protected circuit, voltage diode replace PMOS, avoid produce Latch- up phenomena. In the SOURCE protected circuit, Drain of NMOS adopted RPO design that make the current through Drain separated equably. The second ...
Keywords:TFT_LCD Drive Chip  ESD  Breakdown voltage  
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