Channel Thickness Dependence of the Magnetic Properties in (Ga,Mn)As FET Structures |
| |
| Authors: | M. Endo D. Chiba Y. Nishitani F. Matsukura H. Ohno |
| |
| Affiliation: | (1) Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan;(2) Semiconductor Spintronics Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Kitamemachi 1-18, Aoba-ku, Sendai 980-0023, Japan |
| |
| Abstract: | We have fabricated a series of field-effect transistor structures with a thin (Ga,Mn)As channel with thickness t of 3.5, 4.0, 4.5, and 5.0 nm, and investigated the effect of electric-field E on their magnetic properties. The Curie temperature T C showed a clear dependence on the magnitude of E, and its controllable range became larger with decreasing t and reached 15 K for the device with t=3.5 nm, which corresponded to 32% of T C of the layer. |
| |
| Keywords: | (Ga,Mn)As Curie temperature Electric field-effect control of ferromagnetism Ferromagnetic semiconductor p– d Zener model |
| 本文献已被 SpringerLink 等数据库收录！ |
|
