High-speed InGaP/GaAs heterojunction bipolar transistors withburied SiO2 using WSi as the base electrode |
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| Authors: | Oka T Ouchi K Uchiyama H Taniguchi T Mochizuki K Nakamura T |
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| Affiliation: | Central Res. Lab., Hitachi Ltd., Tokyo; |
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| Abstract: | High-speed InGaP/GaAs heterojunction bipolar transistors (HBT's) with a small emitter area are described. WSi is used as the base electrode to fabricate HBT's with a narrow base contact width and a buried SiO2 structure. An HBT with an emitter area of 0.8×5 μm exhibited an fT of 105 GHz and an fmax of 120 GHz. These high values are obtained due to the reduction of CBC by using buried SiO2 with a narrow base contact width, indicating the great potential of GaAs HBT's for high-speed and low-power circuit applications |
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