Effect of thermal treatment on ZnO substrate for epitaxial growth |
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Authors: | Xing Gu Shariar Sabuktagin Ali Teke Daniel Johnstone Hadis Morkoç Bill Nemeth Jeff Nause |
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Affiliation: | (1) Virginia Commonwealth University, Richmond, VA 23284, USA;(2) Department of Physics, Faculty of Art & Science, Balikesir University, 10100 Balikesir, Turkey;(3) Cermet, Inc., Atlanta, GA 30318, USA |
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Abstract: | ZnO is a highly efficient photon emitter, and has optical and piezoelectric properties that are attractive for a variety of applications in sensors and potentially optoelectronic devices such as emitters. Due to its identical stacking order and close lattice match to GaN, it is also being developed as a substrate material for GaN epitaxy. However, the surface finish of the ZnO is such that much of the damage induced by sawing and follow up mechanical polishing remains. We developed a thermal treatment method to eliminate surface damage on the 0 face of ZnO (0 0 0 1) to prepare it for epitaxial growth. Atomic force microscopy images of ZnO (0 0 0 1) annealed at 1050 °C for 3 h etc. show that residual scratches from mechanical polishing are removed and atomically flat, terrace-like surfaces are attained. In addition, low-temperature photoluminescence and high-resolution X-ray diffraction measurements have been employed to investigate the effect of annealing on ZnO substrates. |
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