A 0.18 μm CMOS 3-5 GHz broadband flat gain low noise amplifier |
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引用本文: | 冯立松,黄鲁,白雪飞,席天佐.A 0.18 μm CMOS 3-5 GHz broadband flat gain low noise amplifier[J].半导体学报,2010(2):38-44. |
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作者姓名: | 冯立松 黄鲁 白雪飞 席天佐 |
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作者单位: | Department;Electronic;Science;Technology;University;China; |
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基金项目: | supported by the State Hi-Tech Research and Development Program(No.2007AA01Z2b2) |
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摘 要: | A 3-5 GHz broadband flat gain differential low noise amplifier(LNA) is designed for the impulse radio ultra-wideband(IR-UWB) system.The gain-flatten technique is adopted in this UWB LNA.Serial and shunt peaking techniques are used to achieve broadband input matching and large gain-bandwidth product(GBW).Feedback networks are introduced to further extend the bandwidth and diminish the gain fluctuations.The prototype is fabricated in the SMIC 0.18μm RF CMOS process.Measurement results show a 3-dB gain band...
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关 键 词: | 增益平坦度 低噪声放大器 CMOS 超宽带 GHz 微米 增益带宽 输入匹配 |
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