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A 0.18 μm CMOS 3-5 GHz broadband flat gain low noise amplifier
引用本文:冯立松,黄鲁,白雪飞,席天佐.A 0.18 μm CMOS 3-5 GHz broadband flat gain low noise amplifier[J].半导体学报,2010(2):38-44.
作者姓名:冯立松  黄鲁  白雪飞  席天佐
作者单位:Department;Electronic;Science;Technology;University;China;
基金项目:supported by the State Hi-Tech Research and Development Program(No.2007AA01Z2b2)
摘    要:A 3-5 GHz broadband flat gain differential low noise amplifier(LNA) is designed for the impulse radio ultra-wideband(IR-UWB) system.The gain-flatten technique is adopted in this UWB LNA.Serial and shunt peaking techniques are used to achieve broadband input matching and large gain-bandwidth product(GBW).Feedback networks are introduced to further extend the bandwidth and diminish the gain fluctuations.The prototype is fabricated in the SMIC 0.18μm RF CMOS process.Measurement results show a 3-dB gain band...

关 键 词:增益平坦度  低噪声放大器  CMOS  超宽带  GHz  微米  增益带宽  输入匹配
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