多晶SiC薄膜的生长及其压阻特性

在Ａｒ、ＣＨ４的混合气体中用反应性磁控溅射法生长了多品ＳｉＣ薄膜。溅射靶使用了单晶硅片。ＳｉＣ薄膜的生长速率１０～４０ｎｍ／ｍｉｎ。Ａｒ的分压为６０ｍｔｏｒｒ（１ｔｏｒｒ＝１３３．３２２Ｐａ，以下同），ＣＨ４的分压为４０ｍｔｏｒｒ，衬底温度为７５０℃时，薄膜具有显著的多晶特性。杂质浓度、Ｈａｌｌ迁移率、电阻率分别为１０（１８）ｃｍ（－３）、１０ｃｍ（２）／Ｖ·ｓ、１０（－１）１０（－２）Ωｃｍ。压阻系数约为１５。

Preparation of Polycrystalline SiC Thin Films and Their Piezo-resistive Properties

Silicon carbide thin films were prepared by reactive magnetron sputtering in mixture gases of Ar and CH4. The target was made from a single crystal Si wafer. The depasition rate was from 10 to 40nm/min. Films were characterized by X-ray diffraction.The high preferred orientation was observed in the data of the sample prepared at Ar partial pressure of 60mtorr, CH4 partial pressure of 40mtorr and substrate of 750 ℃. The carrier concentration, the Hall mobility and the resistivity was 1018cm(-3).10cm2/V·s. 10(-1)～10(-2)Ωcm, respectivily. The gauge factor was about 15.