First On-Wafer Power Characterization of MMIC Amplifiers at Sub-Millimeter Wave Frequencies |
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Authors: | Fung AK Gaier T Samoska L Deal WR Radisic V Mei XB Yoshida W Liu PS Uyeda J Barsky M Lai R |
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Affiliation: | Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA; |
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Abstract: | We present on-wafer power measurements of 35 nm gate length InP HEMT amplifiers at 330 GHz. Various amplifiers are examined. The maximum output power of 1.78 mW is measured from a three stage amplifier. Additional output power may be possible but limited by our input power source level to saturate amplifiers. This result is the highest frequency on-wafer power measurement we are aware of reported to date, and demonstrates the technique we utilize to be a fast method of evaluating power performance of submillimeter wave amplifiers without the need to package devices. |
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