Broadband microwave noise characteristics of high-linearity composite-channel Al/sub 0.3/Ga/sub 0.7/N/Al/sub 0.05/Ga/sub 0.95/N/GaN HEMTs |
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Authors: | Zhiqun Cheng Jie Liu Yugang Zhou Yong Cai Chen K.J. Lau K.M. |
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Affiliation: | Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China; |
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Abstract: | We report broadband microwave noise characteristics of a high-linearity composite-channel HEMT (CC-HEMT). Owing to the novel composite-channel design, the CC-HEMT exhibits high gain and high linearity such as an output third-order intercept point (OIP3) of 33.2 dBm at 2 GHz. The CC-HEMT also exhibits excellent microwave noise performance. For 1-/spl mu/m gate-length devices, a minimum noise figure (NF/sub min/) of 0.7 dB and an associated gain (G/sub a/) of 19 dB were observed at 1 GHz, and an (NF/sub mi/) of 3.3 dB and a G/sub a/ of 10.8 dB were observed at 10 GHz. The dependence of the noise characteristics on the physical design parameters, such as the gate-source and gate-drain spacing, is also presented. |
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