硅基纳米b-SiC量子点列阵的制备

报道了用两步自组装法制备硅基纳米碳化硅量子点列阵. 先将两种硅烷偶联剂均匀有序地偶联到洁净的单晶硅片上，其中一种偶联剂能打破C60上的碳碳双键而使C60通过偶联剂均匀有序地分布在硅片的表面上. 然后用夹心法或覆盖法将样品在900℃的氮气氛中退火20 min，使C60分解成活性碳，与周围的硅原子结合生成碳化硅，碳化硅分子的自组装形成了碳化硅纳米晶粒(量子点)，C60在硅表面的有序排列导致了纳米碳化硅量子点列阵形成.

Preparation of Silicon-based Nanoscale β-SiC Quantum Dot Array

Preparation of nanoscale b-SiC quantum dot array having application potential in Si-based optoelectronic integration by two-step self-organization is reported. Firstly, C60 molecules were covalently coupled on the modified Si wafer through one of two kinds of 2D distributed coupling agents. One of the coupling agents could break CC double bonds in C60 and make C60 molecules coupled uniformly on the surface of Si wafer. Secondly, to form the SiC quantum dots, two approaches were taken. Either a layer of Si film is coated on the C60-coupled sample or another Si wafer is covered on the coupled sample to form a sandwiched structure. Subsequent annealing at 900oC in N2 for 20 min makes C60 decomposed to produce active C ions. Since Si atoms exist around these C ions, they react to form SiC. Self-organization of SiC molecules forms a 2D SiC quantum dot array. The order of C60 arrangement determines the ordering of SiC array.