| Nb掺杂浓度对BaTiO3陶瓷半导化的影响 |
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| 引用本文： | 刘宏 赵超. Nb掺杂浓度对BaTiO3陶瓷半导化的影响[J]. 山东轻工业学院学报, 1991, 5(2): 23-29 |
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| 作者姓名： | 刘宏 赵超 |
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| 作者单位： | 山东经工业学院硅酸盐系，山东经工业学院硅酸盐系 |
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| 摘 要： | 本文就Nb掺杂BaTiO_3陶瓷中电阻率分布不均匀现象进行了实验研究,结果表明在掺杂量处在半导化组分附近的样品中电阻率分布存在有规律的分层现象,在此基础上对施主掺杂BaTiO_3陶瓷的室温电阻率随掺杂量的变化规律作出了新解释,并对分层现象形成的原因作了初步探讨。
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| 关 键 词： | BaTiO3陶瓷 半导体 施主掺杂 Nb |
The Effect of Nb--doped concentration on Semiconducting Property to BaTiO_3 Semiconducting Ceramics |
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| Liu Hong,Zhao Chao. The Effect of Nb--doped concentration on Semiconducting Property to BaTiO_3 Semiconducting Ceramics[J]. Journal of Shandong Institute of Light Industry(Natural Science Edition), 1991, 5(2): 23-29 |
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| Authors: | Liu Hong Zhao Chao |
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| Affiliation: | Liu Hong;Zhao Chao Department of Silicate |
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| Abstract: | In this paper, an experimental study on inhomogenious phenomenon of re- sistivity distribution in Nb-doping BaTiO_3 ceramics had been made and the dependence of the distribution on the concentration of the donor Nb in the ceramics was found. Depending on the experiment, a new explanation about the change of the resistivity of BaTiO_3 ceramics donor-doped at room tem- perature on donor concentration and discussion about the inhomogenious distribu- tion were proposed. |
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| Keywords: | PTCR semicoductor resistivity donor-doping defect chemistory |
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