Multi-quantum-well lasers emitting at 1.55 mu m grown by GSMBE |
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| Authors: | Perales A. Goldstein L. Fernier B. Starck C. Lievin J.L. Poingt F. Benoit J. |
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| Affiliation: | Lab. de Marcoussis, France; |
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| Abstract: | GaInAs/GaInAsP multi-quantum-well structures emitting at 1.55 mu m have been realised by gas source molecular beam epitaxy (GSMBE) over a large range of growth temperature. Threshold current densities as low as 0.81 kA/cm/sup 2/ have been obtained. The first BH lasers fabricated by GSMBE from these heterostructures exhibit low threshold current (18 mA) and linear DC light-current characteristics up to 20 mW.<> |
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