| 亚微米自对准工艺 |
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| 引用本文： | 唐明浩,朱石平,张大立,郎秀兰,吕仲志,王书明,苏丽娟. 亚微米自对准工艺[J]. 微纳电子技术, 1999, 0(3) |
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| 作者姓名： | 唐明浩 朱石平 张大立 郎秀兰 吕仲志 王书明 苏丽娟 |
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| 作者单位： | 电子部第十三所 |
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| 摘 要： | 介绍了一种新的亚微米发射极窗口刻蚀工艺。利用ＲＩＥ技术和边墙隔离技术，无须对位光刻，使发射极窗口精确地位于发射区中央。该工艺简单，具有良好的可操作性和重复性。
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| 关 键 词： | 光刻 RIE 边墙隔离 |
Submicron SelfAlignment Technology |
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| Tang Minghao,Zhu Shiping,Zhang Dali,Lang Xiulan,Lu Zhongzhi,Wang Shuming,Su Lijuan. Submicron SelfAlignment Technology[J]. Micronanoelectronic Technology, 1999, 0(3) |
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| Authors: | Tang Minghao Zhu Shiping Zhang Dali Lang Xiulan Lu Zhongzhi Wang Shuming Su Lijuan |
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| Abstract: | This paper introduces a novel submicron etching technology for emitter window.The RIE and sidewall insulation are adopted while alignment is not needed.The technology makes the contact window position in the center of emitter precisely.The process is simple,operative and repetitive. |
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| Keywords: | PhotolithograhyRIESidewall insulation |
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