Optical and electrical properties of 4<Emphasis Type="Italic">H</Emphasis>-SiC irradiated with fast neutrons and high-energy heavy ions |
| |
| Authors: | E V Kalinina G F Kholuyanov G A Onushkin D V Davydov A M Strel’chuk A O Konstantinov A Hallén A Yu Nikiforov V A Skuratov K Havancsak |
| |
| Affiliation: | 1.Ioffe Physicotechnical Institute,Russian Academy of Sciences,St. Petersburg,Russia;2.ACREO AB,Kista,Sweden;3.Royal Institute of Technology (Department of Electronics),Kista,Sweden;4.Specialized Electronic Systems,Moscow,Russia;5.Joint Institute for Nuclear Research,Dubna,Russia;6.E?tv?s University,Budapest,Hungary |
| |
| Abstract: | Photoluminescence and deep-level transient spectroscopy are used to study the effect of irradiation with fast neutrons and high-energy Kr (235 MeV) and Bi (710 MeV) ions on the optical and electrical properties of high-resistivity high-purity n-type 4H-SiC epitaxial layers grown by chemical vapor deposition. Electrical characteristics were studied using the barrier structures based on these epitaxial layers: Schottky barriers with Al and Cr contacts and p+-n-n+ diodes fabricated by Al ion implantation. According to the experimental data obtained, neutrons and high-energy ions give rise to the same defect-related centers. The results show that, even for the extremely high ionization density (34 keV/nm) characteristic of Bi ions, the formation of the defect structure in SiC single crystals is governed by energy losses of particles due to elastic collisions. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
