Tradeoff between 1/f noise and microwave performance in AlGaAs/GaAsheterojunction bipolar transistors |
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Authors: | Costa D. Tutt M.N. Khatibzadeh A. Pavlidis D. |
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Affiliation: | Corp. R&D Labs., Texas Instrum. Inc., Dallas, TX; |
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Abstract: | The 1/f noise characteristics and microwave gain of AlGaAs/GaAs heterojunction bipolar transistors (HBT's) have been investigated as a function of surface passivation ledge length. These measurements clearly demonstrate that the ledge length imposes a tradeoff between the 1/f noise and microwave power gain performance. Compared to a conventional unpassivated self-aligned HBT, HBT's with 0.4 and 1.1 μm ledge lengths improve the equivalent input base noise current spectral density at 100 Hz by as much as 2 dB and 6.5 dB, respectively; while degrading the maximum available gain at 18 GHz by 0.3 dB and 2.4 dB, respectively |
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