Characterisation of the growth of a carbonaceous film on silicon |
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Authors: | J.P. Beardmore A.J. PalmerC.G.C.H.M. Fabrie K.A.H. van LeeuwenR.T. Sang |
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Affiliation: | a Centre for Quantum Dynamics, Griffith University, Nathan, Queensland 4111, Australiab Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven, The Netherlands |
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Abstract: | In this paper we present the first characterisation of growth of a carbonaceous film on a silicon substrate exposed to a metastable atom beam using an in situ rotating polariser ellipsometer. The initial deposition of oil due to a background partial pressure in vacuum is investigated. Subsequent exposure of the deposited oil to a high flux metastable neon (Ne*) beam results in cross-linking of the oil film, creating a polymerised carbonaceous layer. Values for the mean residence time, polymerisation cross-section, and desorption cross-section are calculated and compared to similar studies performed for ion bombardment. Simple estimates can provide reasonable values for application of the theory to other systems. |
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Keywords: | Carbonaceous film Thin films Ellipsometry Metastable atoms Neon |
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