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Characterisation of the growth of a carbonaceous film on silicon
Authors:J.P. Beardmore  A.J. PalmerC.G.C.H.M. Fabrie  K.A.H. van LeeuwenR.T. Sang
Affiliation:
  • a Centre for Quantum Dynamics, Griffith University, Nathan, Queensland 4111, Australia
  • b Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven, The Netherlands
  • Abstract:In this paper we present the first characterisation of growth of a carbonaceous film on a silicon substrate exposed to a metastable atom beam using an in situ rotating polariser ellipsometer. The initial deposition of oil due to a background partial pressure in vacuum is investigated. Subsequent exposure of the deposited oil to a high flux metastable neon (Ne*) beam results in cross-linking of the oil film, creating a polymerised carbonaceous layer. Values for the mean residence time, polymerisation cross-section, and desorption cross-section are calculated and compared to similar studies performed for ion bombardment. Simple estimates can provide reasonable values for application of the theory to other systems.
    Keywords:Carbonaceous film   Thin films   Ellipsometry   Metastable atoms   Neon
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