The Kondo Effect of Surface Excitons |
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| Authors: | P. D. Altukhov |
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| Affiliation: | (1) A. F. Ioffe Physical-Technical Institute, Politekhnicheskaya Street 26, St. Petersburg, 194021, Russia |
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| Abstract: | A recombination radiation line of real excitons in dense two-dimensional electron gas at the [100] silicon surface is observed in luminescence spectra of metal-oxide-semiconductor (MOS) structures. A new effect of anisotropic paramagnetic reduction of the luminescence line indicates a strong influence of the Kondo correlations on electron paramagnetism of the excitons. |
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| Keywords: | silicon surface two-dimensional electrons excitons Kondo effects |
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