Passivation effects on reactive-ion-etch-formed n-on-p junctions in HgCdTe |
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Authors: | J K White J Antoszewski R Pal C A Musca J M Dell L Faraone J Piotrowski |
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Affiliation: | (1) Department of Electrical and Electronic Engineering, The University of Western Australia, 6009, WA, Australia;(2) Solid State Physics Laboratory, Delhi, India;(3) VIGO Systems, Warsaw, Poland |
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Abstract: | The formation of n-on-p junctions by reactive ion etching (RIE) of HgCdTe using an H2/CH4 plasma has previously been demonstrated to produce high-performance photodiodes. To fully exploit the inherent advantages
of this process, a compatible surface-passivation technology that provides long-term stability is required. This paper examines
the effects of thermally evaporated CdTe- and ZnS-passivation on RIE-formed photodiodes undergoing low-temperature baking
in a vacuum at temperatures typically used for Dewar bakeout. Experimental results show that as a single passivation layer,
neither CdTe nor ZnS are suitable for vacuum packaging of RIE-formed diodes that are to be operated at cryogenic temperatures.
A double passivation layer, however, consisting of CdTe passivation and an insulating overlayer of ZnS, produces photodiodes
that are stable throughout 175 h, approximately 1 week, of 80°C baking in a vacuum. |
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Keywords: | HgCdTe RIE CdTe ZnS passivation type conversion bake stability |
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