Luminescence behavior from amorphous silicon-carbide film-based optical microcavities

All solid-state optical microcavities based on amorphous silicon-carbide films were designed and prepared in conventional plasma chemical vapor deposition system. The resonant cavity mode was clearly observed in the transmission spectrum, which is in well agreement with the pre-designed value. Room temperature photoluminescence spectra were studied which contain both the enhanced emission band at resonant mode and the stop-band edge emission bands. The luminescence intensity is significantly enhanced and the bandwidth is obviously narrowed at the resonant wavelength due to the Si-based optical cavity structures. The modulation effect of cavity on the transmission and emission behaviors was investigated by angle-dependent transmission, photoluminescence spectra together with photoluminescence excitation spectra.