Integration of GaN thin films with dissimilar substrate materials by Pd-In metal bonding and laser lift-off |
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Authors: | W S Wong A B Wengrow Y Cho A Salleo N J Quitoriano N W Cheung T Sands |
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Affiliation: | (1) Department of Materials Science and Mineral Engineering, University of California, 94720 Berkeley, CA;(2) Applied Science and Technology Graduate Group, University of California, 94720 Berkeley, CA;(3) Department of Electrical Engineering and Computer Sciences, University of California, 94720 Berkeley, CA |
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Abstract: | Gallium nitride (GaN) thin films grown on sapphire substrates were successfully bonded and transferred onto GaAs, Si, and
polymer “receptor” substrates using a low-temperature Pd-In bond followed by a laser lift-off (LLO) process to remove the
sapphire growth substrate. The GaN/sapphire structures were joined to the receptor substrate by pressure bonding a Pd-In bilayer
coated GaN surface onto a Pd coated receptor substrate at a temperature of 200°C. X-ray diffraction showed that the intermetallic
compound PdIn3 had formed during the bonding process. LLO, using a single 600 mJ/cm2, 38 ns KrF (248 nm) excimer laser pulse directed through the transparent sapphire substrate, followed by a low-temperature
heat treatment, completed the transfer of the GaN onto the “receptor” substrate. Cross-sectional scanning electron microscopy
and x-ray rocking curves showed that the film quality did not degrade significantly during the bonding and LLO process. |
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Keywords: | Gallium nitride (GaN) laser lift-off low-temperature wafer bonding laser processing silicon (Si) gallium arsenide (GaAs) polymers |
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