| 对ZnO压敏电阻隧道效应的探讨 |
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| 引用本文： | 许业文,朱基千,徐政. 对ZnO压敏电阻隧道效应的探讨[J]. 建筑材料学报, 2005, 8(2): 174-178 |
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| 作者姓名： | 许业文 朱基千 徐政 |
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| 作者单位： | 同济大学,材料科学与工程学院,上海,200092;总装备部工程兵科研一所,江苏,无锡,214035;同济大学,材料科学与工程学院,上海,200092 |
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| 摘 要： | 根据氧化锌压敏电阻的微观结构，提出了势垒交错导致共振隧穿的模型，并运用传递矩阵法合理地解释了ZnO压敏电阻的隧道效应，所得的隧穿电流符合实际ZnO压敏电阻在击穿区的温度特性．
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| 关 键 词： | ZnO压敏电阻 隧道效应 势垒交错 共振隧穿 传递矩阵法 |
| 文章编号： | 1007-9629(2005)02-0174-05 |
| 修稿时间： | 2004-03-22 |
Discussion of Tunnelling Effect of ZnO Varistors |
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| XU Ye-wen. Discussion of Tunnelling Effect of ZnO Varistors[J]. Journal of Building Materials, 2005, 8(2): 174-178 |
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| Authors: | XU Ye-wen |
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| Abstract: | With discussion on tunnelling effect of ZnO varistors, a new model is proposed, which can depict barriers stagger near the grains of ZnO varistors. Transfer matrix theory was used to give an explanation of the resonating tunnelling effect of ZnO varistors. The tunnelling current deduced by this model consists of practical temperature behavior of ZnO varistors in breakdown region. |
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| Keywords: | ZnO varistors tunnelling effect barriers staggering resonating tunnelling transfer matrix theory |
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