High dielectric constant materials and their application to IC gate stack systems

1 IntroductionSilicon dioxide (Si O2) has long beenthe key gate dielectric material exhibiting superior electrical isola-tion property and stable ,high quality Si-Si O2interface . However ,for nanoelectronic technology the alter-native gate dielectric materials have to be found to replace Si O2.The candidate materials are required thesystematic properties such as : permittivity , band gap,thermodynamic stability ,interface quality ,fil mmorphology ,process compatibility and reliability . Th…

High dielectric constant materials and their application to IC gate stack systems

High dielectric constant (high-k) materials are vital to the nanoelectronic devices. The paper reviews research development of high-k materials, describes a variety of manufacture technologies and discusses the application of the gate stack systems to non-classical device structures.