An Analytical Compact Circuit Model for Nanowire FET

In this paper, we propose a quasi-analytical device model of nanowire FET (NWFET) for both ballistic and drift-diffusion current transport, which can be used in any conventional circuit simulator like SPICE. The closed form expressions for current-voltage (I-V) and capacitance-voltage characteristics are obtained by analytically solving device equations with appropriate approximations. The developed model was further verified with the measured I-V characteristics of an NWFET device. Results show a close match of the model with measured data.