近期光刻用ArF准分子激光技术发展

193 nm ArF准分子激光光刻技术已广泛应用于90 nm以下节点半导体量产。ArF浸没式也已进入45 nm节点量产阶段。双图形光刻（DPL）技术被业界认为是下一代光刻32 nm节点最具竞争力的技术。利用双图形技术达到32 nm及以下节点已经被诸多设备制造商写入自己的技术发展线路。Cymer公司和Gigaphoton公司为双图形光刻开发了高输出功率、高能量稳定性和具有稳定的窄谱线宽度ArF准分子光源。分析了近期发展用于改进准分子激光性能的关键技术：主振-功率再生放大(MOPRA)结构、主振-功率振荡(MOPO)结构，主动光谱带宽稳定技术，先进的气体管理技术。对光刻用准分子激光光源技术发展趋势进行了简要的讨论。

Recent development of ArF excimer laser technology for lithography

193 nm ArF excimer lasers are widely used from below 90 nm node in semiconductor mass production. ArF immersion lithography technology has been used to volume production at the 45 nm node. Double patterning lithography (DPL) is considered to be the most promising technology to meet the requirement associated with the next-generation half pitches of 32 nm node. Double patterning has now become a fixture on the development roadmaps of many device manufacturers for 32 nm and beyond. Cymer and Gigaphoton have developed higher power, higher energy stability and stable narrower spectral bandwidth ArF excimer laser for double patterning lithography. The key technologies recently employed to improve performance of ArF excimer lasers are analyzed.：Master Oscillator Power Regenerative Amplifier (MOPRA) and Master Oscillator Power Oscillator (MOPO) configurations, active bandwidth stabilization technology, advanced gas management technology. At last, development trend of excimer laser technology for lithography is briefly discussed.