| Cu掺杂对ZnO量子点光致发光的影响 |
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| 引用本文： | 徐建萍. Cu掺杂对ZnO量子点光致发光的影响[J]. 上海电力学院学报, 2010, 0(11) |
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| 作者姓名： | 徐建萍 |
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| 作者单位： | 天津理工大学材料物理研究所显示材料与光电器件省部共建教育部重点实验室天津市光电显示材料与器件重点实验室;南京大学固体微结构物理国家重点实验室; |
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| 基金项目： | 国家自然科学基金资助项目(10904109,60907021,60977035,60877029); 天津市科技发展计划资助项目(09JCYBJC01400,07JCYBJC06400); 天津市“材料物理与化学”重点学科资助项目; 发光与光信息技术教育部重点实验室研究基金资助项目(2010LOI11) |
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| 摘 要： | 通过溶液法合成了Cu掺杂ZnO量子点。X射线衍射(XRD)和高分辨电子透射电镜(HRTEM)图像显示Cu掺杂ZnO量子点具有六角纤锌矿结构,晶粒大小为4～5nm。Cu掺杂抑制了ZnO量子点颗粒长大。室温光致发光(PL)谱观察到紫外带边和可见区两个发射峰。随着Cu掺杂浓度的增大,紫外荧光峰位发生缓慢红移,由366nm移到370nm;可见区发射峰位发生蓝移,由525nm移到495nm;同时,两个发射峰强度降低。光谱结果表明:Cu的掺入,一方面抑制表面与O空位有关的缺陷,在495nm出现了与Cu1+有关的发射峰;另一方面,Cu离子掺入ZnO量子点引入一些非辐射中心,降低了自由激子发射。
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| 关 键 词： | Cu掺杂ZnO量子点 光致发光(PL)谱 |
Influence of Cu doping on photoluminescence properties of ZnO quantum dots |
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| XU Jian-ping. Influence of Cu doping on photoluminescence properties of ZnO quantum dots[J]. Journal of Shanghai University of Electric Power, 2010, 0(11) |
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| Authors: | XU Jian-ping |
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| Affiliation: | Institute of Material Physics,Key Laboratory of Display Materials , Photoelectric Devices(Tianjin University of Technology),Ministry of Education,Tianjin Key Laboratory for Photoelectric Materials , Devices,Tianjin University of Technology,Tianjin 300384,China, Laboratory of Solid State Microstructures,Nanjing University,Nanjing 210093, |
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| Abstract: | Cu-doped ZnO quantum dots (QDs) are synthesized successfully via a solution-phase method.X-ray diffraction patterns(XRD) and high-resolution transmission electron microscopy(HRTEM) images reveal that Cu-doped ZnO QDs are with hexagonal wurtzite ZnO structure in average particle size of 4-5 nm.Room temperature photoluminescence(PL) spectra show an ultraviolet(UV) band edge emission and a visible emission band.With Cu doping concentration increasing from 0 to 1%, the UV emission peak position slowly shifts fr... |
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| Keywords: | Cu-doped ZnO quantum dots(QDs) photoluminescence(PL) |
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