SiC新一代电力电子学的创新发展

进入21世纪,宽禁带半导体材料的发展对电力电子学产生了革命性的影响,SiC新一代电力电子学应运而生.从高频高效率开关应用、高功率密度、高压变换、高温工作、热管理和可靠性研究等方面介绍了近几年SiC电力电子学的应用创新.应用创新的内容包含:电路拓扑结构设计、优化设计方法、SiC功率器件和先进高频无源元件的采用、寄生参量的抑制、驱动电路设计、高温粘结与封装工艺、新冷却方法和极端工作条件的可靠性试验方法等.对SiC电力电子学的应用创新进行了综合评价.

Innovative Development of the New Generation of SiC Power Electronics

In the 21st century,the development of wide bandgap semiconductor materials has a revolutionary impact on power electronics,and a new generation of SiC power electronics arises at the historic moment.The application innovation of the SiC power electronics in recent years is introduced from the aspects of high-frequency switching applications with high efficiency,high power density,high voltage conversion,high temperature work,thermal management and reliability research.The application innovation includes the circuit topology structure design,the optimization design method,the use of SiC power devices and advanced high-frequency passive components,inhibition of parasitic parameters,drive circuit design,high temperature bonding and encapsulation technology,the new cooling method and the test methods of reliability under the extreme working condition.The application innovation of the SiC power electronics is also evaluated comprehensively.