高密度陶瓷倒装焊封装可靠性试验开路后的失效定位

陶瓷材料具有优良的综合特性,被广泛应用于高可靠微电子封装.陶瓷倒装焊封装的特殊结构使得对其进行失效分析相较其他传统封装形式更为困难.针对一款在可靠性试验中发生开路的高密度陶瓷倒装焊封装器件,制定了一套从非破坏性到破坏性的试验方案对其进行分析.通过时域反射计(TDR)测试排除了基板内部失效的可能性,通过X射线(X-ray)检测、超声扫描显微镜(SAM)和光学显微分析初步断定失效位置,并最终通过扫描电子显微镜和X射线能谱仪实现了对该器件的准确的失效定位,确定失效位置为基板端镀Ni层.该失效分析方法对其他陶瓷倒装焊封装的失效检测及分析有一定的借鉴意义.

Failure Localizations on the Open Circuit for a High Density Ceramic Flip-Chip Package After Reliability Test

Ceramic materials are widely used in high reliability microelectronic packaging as its excellent properties.Generally,failure analysis for ceramic flip-chip structure is more difficult than other traditional packaging types considering its special structure.A test scheme from non destructive examination to destructive physical analysis was developed for a high density ceramic flip-chip packaging device with open circuit failures in reliability testing.The possibility of internal failure of the substrate was eliminated through time domain reflectometry (TDR) test.The failure position was preli-minarily determineby X-ray,scanning acoustic microscope (SAM) and optical microanalysis.And finally,the nickel layer was found to be the accurate failure position of the device,which was realized by scanning electron microscope and energy dispersive X-ray spectrometer.The failure analysis method can be used for reference for failure detection and analysis of other ceramic flip-chip packages.