氮气流量对磁控溅射AlN薄膜光学性能的影响

AlN薄膜因其具有优异的物理化学性能而有着广阔的应用前景,采用反应磁控溅射法在低温条件下制备AlN薄膜是近些年科研工作的热点.采用直流磁控溅射法,于室温下通入不同流量的氮气在p型硅(100)和载玻片衬底上沉积了AlN薄膜.利用傅里叶变换红外(FTIR)光谱仪、X射线衍射仪(XRD)、扫描电子显微镜(SEM)和分光光度计等分析薄膜的组分、结构、形貌和光学性能.结果表明随着氮气流量的增加,AIN薄膜质量变好,N2流量为8 cma/min时制备的AlN薄膜为六方纤锌矿结构,在680 cm-1处具有明显的FTIR吸收峰,进一步说明成功制备了AlN薄膜.在300～ 900 nm的波长范围内,薄膜透过率最高可达94％;薄膜带隙随着氮气流量的增加而增大,最大带隙约为4.04 eV.

Influence of the Nitrogen Flow Rate on the Optical Properties of AlN Thin Films Deposited by Magnetron Sputtering

Aluminum nitride (AlN) thin film has broad application prospects due to its excellent physical and chemical properties and AlN film fabrication by the reactive magnetron sputtering method at low temperature is a hotspot of research work in recent years.AlN thin films were deposited at room temperature by DC magnetron sputtering with different N2 flow rates on p-type Si (100) wafer and slide glass substrates.The composition,microstructure,morphology and optical properties of AlN thin films were analyzed by the Fourier transform infrared (FTIR) spectrometer,X-ray diffractometer (XRD),scanning electron microscope (SEM) and spectrophotometer,respectively.The results show that the quality of films is improved with the increase of the N2 flow rate,and the obtained AlN thin films under 8 cm3/min N2are hexagonal wurtzite structure and an intense absorption peak exists at 680 cm-1 of wavelength in the FTIR spectrum,which further proves that the AlN films are successfully fabricated.The transmittance of AlN thin films is up to 94％ in the wavelength range of 300-900 nm.The optical band gaps of obtained AlN thin films become enlarged with the increase of the N2 flow rate and the maximum band gap is about 4.04 eV.